Contactless measurements of resistivity of semiconductor wafers employing single-post and split-post dielectric-resonator techniques
Krupka, Jerzy, and Mazierska, Janina (2007) Contactless measurements of resistivity of semiconductor wafers employing single-post and split-post dielectric-resonator techniques. IEEE Transactions on Instrumentation and Measurement, 56 (5). pp. 1839-1844.
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Complementary single- and split-post dielectric- resonator techniques were used for contactless absolute resistivity measurements of semiconductor wafers and for onwafer resistivity mapping in the range of 10^-5 to 10^5 Omega ldr cm. Uncertainties of the resistivity measurements employing both techniques are in the range of 2%-4%. Permittivities of high-resistivity semiconductors were measured with uncertainties of approximately 0.5%. Several Silicon, GaAs, and SiC wafers were tested at room and at elevating temperatures, showing excellent repeatability of measurements.
|Item Type:||Article (Refereed Research - C1)|
|Keywords:||conductivity measurement; contactless measurements; resistivity mapping; semiconductor material measurements; SiC; silicon|
|FoR Codes:||09 ENGINEERING > 0906 Electrical and Electronic Engineering > 090699 Electrical and Electronic Engineering not elsewhere classified @ 100%|
|SEO Codes:||86 MANUFACTURING > 8616 Computer Hardware and Electronic Equipment > 861603 Integrated Circuits and Devices @ 100%|
|Deposited On:||24 Jul 2009 12:24|
|Last Modified:||24 May 2013 00:28|
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|Citation Counts with External Providers:||Web of Science: 12|
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