Contactless measurements of resistivity of semiconductor wafers employing single-post and split-post dielectric-resonator techniques

Abstract

Complementary single- and split-post dielectric- resonator techniques were used for contactless absolute resistivity measurements of semiconductor wafers and for onwafer resistivity mapping in the range of 10^-5 to 10^5 Omega ldr cm. Uncertainties of the resistivity measurements employing both techniques are in the range of 2%-4%. Permittivities of high-resistivity semiconductors were measured with uncertainties of approximately 0.5%. Several Silicon, GaAs, and SiC wafers were tested at room and at elevating temperatures, showing excellent repeatability of measurements.